In our group, we are preparing and analysing nanowires (NWs) from III-V semiconductors in various device structures for energy conversion and other high-performance applications. For the NW analysis, we are using various materials science characterization methods including a dedicated 4-tip scanning tunnelling microscope. In this project funded by the German Research Foundation (DFG), we are addressing III-nitride resonant tunnel diodes in NW core-shell structures for improved performance in the THz range together with our project partners at the University Duisburg-Essen. Key challenges are the crystal quality of the heterostructures and internal polarization fields.
Your tasks
Your job tasks includes the following responsibilities:
Your profile
For being part of the selection process is needed:
Following competences are desirable:
In-depth knowledge of Semiconductor physics mandatoryKnowledge of Natural sciences (physics, chemistry), materials science, and/or engineering in semiconductor preparationAbility to work independently and responsibly in an innovative, interdisciplinary team and research environmentLanguage (English B2 level, German B2 level) skills
Please provide evidence of the qualifications required for the job by certificates and references.
The job is not suitable for part-time employment.
The interviews will be placed in calender week 14/2026 and 15/2026.
What we offer you:
Research assistant (f/m/d) • Ilmenau, DE