Internship in Investigation of Combination of Short Circuit Detection and Dead Time Control for SiC MOSFETs

As widegap power semiconductors SiC MOSFETs gain prominence in power electronics due to their high efficiency superior thermal performance and ability to handle higher voltages and frequencies there is a compelling need for advanced gate driving techniques that enhance their operational stability and efficiency.

This project focuses on implementing and validating closedloop gate driving concept for SiC MOSFETs in halfbridge configurations. The objective is to create an intelligent system that detect the short circuit and dynamically adjusts dead time based on realtime feedback which can be integrated seamlessly into the gate driver IC. This innovative approach aims to optimize performance improve the reliability minimize deadtime losses and reduce electromagnetic interference.

• During your internship you will write a state of the art review.
• Your tasks will also include circuit simulation and hardware implementation.
• Finally you will be responsible for FPGA programming and result analysis.

Qualifications :

Additional Information :

Start :  according to prior agreement

Duration :  6 months

Requirement for this internship is the enrollment at university. Please attach your CV transcript of records enrollment certificate examination regulations and if indicated a valid work and residence permit.

Diversity and inclusion are not just trends for us but are firmly anchored in our corporate culture. Therefore we welcome all applications regardless of gender age disability religion ethnic origin or sexual identity.

Need further information about the job

Joachim Joos (Functional Department)

LIDNI

Remote Work : Employment Type :

Fulltime

Key Skills

Photography,Color Correction,Shot List,Adobe Photoshop,Photo Shoots,Youtube,Camera Movement,Cinematography,Audio Equipment,B-roll,Camera Operation,Final Cut Pro,Digital Media,Video production,Web Series

Vacancy : 1