Master Thesis Characterization of Dynamic Behavior in Bidirectional GaN HEMTs

Bidirectional transistors represent an emerging class of power devices capable of blocking voltage in both directions thanks to two independently controlled gate electrodes. Through monolithic integration bidirectional GaN HighElectronMobilityTransistors (HEMTs) can be realized using only a quarter of the chip area required by two discrete unidirectional devices in a commondrain configuration. This makes them a pivotal technology for enabling compact and efficient nextgeneration power converter topologies.

• During your Master thesis you will extend an existing measurement setup to be able to accurately characterize dynamic behavior of stateoftheart monolithic bidirectional GaN HEMTs.
• You will develop a test fixture for GateCharging and DoublePulseTests to independently bias the two gate electrodes allowing you to examine the DeviceUnderTest in both of its operating modes.
• Your measurement results will then be compared to simulations of an existing compact model. This will be used to validate modelling concepts and further enhance their development.
• Last but not least your thesis will support a publiclyfunded project and a doctoral thesis.

Qualifications :

Additional Information :

Start :  according to prior agreement

Duration :  6 months

Requirement for this thesis is the enrollment at university. Please attach your CV transcript of records examination regulations and if indicated a valid work and residence permit.

Diversity and inclusion are not just trends for us but are firmly anchored in our corporate culture. Therefore we welcome all applications regardless of gender age disability religion ethnic origin or sexual identity.

Need further information about the job

Magnus Haitz (Functional Department)

LIDNI

Remote Work : Employment Type :

Fulltime

Key Skills

Dermatology,Communication,Excel,Furniture,Airlines,Jboss

Experience : years

Vacancy : 1