At the Fraunhofer Institute for Applied Solid State Physics IAF we know our technologies like the back of our hand. Because we are one of the few scientific institutions worldwide to conduct research along the entire semiconductor value chain and on tailor-made synthetic diamonds. Whether high-frequency circuits for communications technology, voltage converter modules for electromobility, laser systems for measurement processes, or innovative hardware and software for quantum computers and quantum sensors: we develop tomorrow’s technology in-house for a sustainable and secure society. When will you join us?
In our microelectronics department we offer a master thesis in the field of GaN power electronics.
What you do:
Master’s thesis topics in the area of RF power devices and circuits are based on our in-house GaN HEMT technologies and reflect our research interests, which currently include the following areas:
What you bring along:
What we offer:
The position is initially limited to 6 month. The monthly working time is 40 hours.
We value and promote the diversity of our employees' skills and therefore welcome all applications - regardless of age, gender, nationality, ethnic and social origin, religion, ideology, disability, as well as sexual orientation and identity. Severely disabled individuals will be given preference if equally qualified.
Our tasks are diverse and adaptable - for applicants with disabilities, we will jointly find solutions that optimally promote your abilities. The same applies if you do not meet all profile requirements due to a disability.
Fraunhofer Institute for Applied Solid State Physics IAF
Human Resources
Tullastrasse 72
79108 Freiburg
Masterthesis: GaN-Based RF Power Devices & Circuits • Freiburg im Breisgau